Become a Member
Become a Member

NEWS & EVENTS

Search Our
Research Library


Ready to become an industry member?

Learn more

Research of Yuhao Zhang's team has been reported by Semiconductor Today!

Sep 11, 2019


Yuhao Zhang Portrait
Yuhao Zhang
CPES is proud to announce that Yuhao Zhang and his team have claimed claim the highest Baliga figure of merit (FOM) of 0.6GW/cm2 so far for β-phase gallium oxide (Ga2O3) vertical Schottky barrier diodes (SBDs)! The breakdown voltage was 1100V.

Semiconductor Today has written an article about "Vertical gallium oxide Schottky barrier diodes with improved performance". See the full article on Seminconductor Today.

Learn more about https://cpes.vt.edu/news/news/975

Our Industry Partners