NEWS & EVENTS
Christina DiMarino and Yuhao Zhang granted award titled 'High-temperature ultra-wide bandgap'
May 11, 2021
High-temperature ultra-wide bandgap
Sponsor: National Science FoundationPIs: Christina DiMarino and Yuhao Zhang - May 5, 2021
This three-year plan is a comprehensive research, education, and outreach program that focuses on developing high-temperature power modules for emerging ultra-wide bandgap (UWBG) gallium oxide (Ga2O3) power semiconductor devices that will yield significant improvements in electrified transportation and harsh-environment systems. This work has four main research goals:
- To develop an electro-thermal, device-package co-design framework that will enable physical insights into the device-package interdependencies, and accelerate the design of power modules optimized for emerging UWBG power semiconductors.
- To evaluate and apply new dielectric materials for use as the high-temperature (300 °C) power mod-ule encapsulant, and as the gate dielectric and passivation in the Ga2O3 power device.
- To explore innovative heat dissipation strategies at the device and package levels for improved thermal performance of Ga2O3-based power modules.
- To demonstrate a 300 °C, 1.2 kV Ga2O3 fin power field-effect-transistor (FinFET) half-bridge power module, and assess its electrical, thermal, and reliability characteristics.
Learn more about https://cpes.vt.edu/news/news/975
