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Yuhao Zhang and team demonstrated the first 10-kV GaN power device in the world!

Jun 01, 2021


Yuhao Zhang
Yuhao Zhang
The team from Virginia Polytechnic Institute and State University in the USA and Enkris Semiconductor Inc in China fabricated multi-channel Schottky barrier diodes (SBDs) with a p-GaN reduced surface field (RESURF) structure, targeted at reducing the peak electric field and hence extending the breakdown capability. At the same time, the multi-channel structure reduces on-resistance.The researchers see their work as potentially contributing to the future needs of renewable-energy generation, industrial motor drives, the electricity grid, and transportation. Competing silicon and silicon carbide (SiC) technologies suffer from slow switching speeds or exorbitant costs, respectively... Read More On Semiconductor Today>>

Learn more about https://cpes.vt.edu/news/news/975

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