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Packaging and High-Temperature Characterization of a 650 V, 150 A eGaN HEMT

Cross-sectional schematic
Fig. 1. Cross-sectional schematic of the high-temperature package for interconnecting and enclosing the eGaN HEMT.
  Power devices based on wide bandgap (WBG) semiconductor materials such as gallium nitride (GaN) present a significant growth opportunity for the power electronics industry because of the materials' high dielectric breakdown strengths, high electron mobilities, and good thermal conductivities. One way to further improve the metrics of power converters is to take advantage of the potential high-temperature capability of the wide bandgap devices. However, there are few studies reported on the high-temperature capability of packaged GaN HEMTs.
  In this work, a commercial 650 V, 150 A enchancement mode GaN (eGaN) HEMT from GaN Systems was packaged and characterized for its static properties at temperatures up to 250° C. The eGaN HEMTs studied in this work were purchased from GaN Systems with the part number of GS-065-150-1-D rated at 650 V, 150 A. Copper was the surface finish on all the gate, source, and drain pads, and the backside of the chip was finished with silver.
  Fig. 1 is a cross-sectional view of the package design. Silver sintering was used for attaching the device chip on direct-bond-copper substrate, and gold wire-bonding for interconnections. Fig. 2 shows the fabrication process of the high-temperature package.
  The packaged device was tested at temperatures up to 250 ° C to determine the effects of temperature on its static characteristics. It survived multiple heating/cooling cycles between room temperature and 250° C as it underwent static testing on a curve tracer. Compared to the characteristics at room temperature, at 250 ° C, the threshold voltage was reduced by about 30%, the saturation current was down below 45% of the rated current, and the leakage current was increased by tens of times.
Farbrication stpes
Fig. 2. Fabrication steps of the high-temperature package.

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