Become a Member
Become a Member


Technology Areas


A wide-bandgap semiconductor

The emergence of wide-bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN) makes it possible to operate power converters at frequencies beyond 5 MHz and temperatures above 200° C. As the switching frequency increases, switching noise shifts to higher frequencies and can be ltered with small passive components — leading to improved power density.

Higher operating temperatures enable not just increased power density, but also the ability for power electronics- based systems to operate in harsh environments, such as military, transportation, and outdoor industrial, and utility systems. High-temperature, high-frequency power electronics systems, however, require more than just better semiconductor devices. Designers must also consider materials, gate drives, controller, passive components, packaging, and cooling.

The scope of work includes

  • High-temperature integration — Reliable direct-bond-metal substrate; different die-attach technologies for thermo-mechanical reliability; high-temperature encapsulants for power electronics modules.
  • Components: Characterization and modeling of wide-bandgap semiconductor devices; high-frequency magnetics and capacitors.
  • Module-level integration: High-temperature packaging of power modules, including gate drives, sensors, and protection.
  • System-level integration: High-density power supplies on a chip; high-temperature control components and system integration; integrated packaging of LEDs and drivers.

CPES research in this area follows two coupled paths, leveraging the availability of wide-bandgap power semiconductors and high-temperature passive components and ancillary functions. Both switching frequency and maximum component temperatures are being pushed as high as component technologies, thermal management, and reliability permit.

Related CPES Research Volumes

Our Industry Partners