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Investigation of High Frequency and High Efficiency Power Converter Technologies Using Advance Power Semiconductor Device

Year: 2006
Fig. 1. 1 MHz 1.2kW Half-bridge parallel resonant converter with SiC MOSFET.
This fellowship explores next-generation converter technology using the emerging wide-band-gap semiconductor devices. The study was conducted through state-of-the-art survey, analysis, and design of devices and converters, to determine the pros and cons of very high frequency converters using wide-band-gap devices.

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