RESEARCH
Characterization of Encapsulants for High-Voltage, High-Temperature Power Electronic Packaging
Year: 2010
Fig. 1. Flow fronts of potential encapsulants A-F. Glass chip size: 6 mm 6 mm. Pictures were taken within one second of the material being dropped at the edge of the chip.
Fig. 2. Textures of materials B-F after the completion of flowing process. Glass chip size: 6 mm 6 mm..
Fig. 3. As-cured textures of materials C-F. Glass chip size: 6 mm 6 mm .
Fig. 4. Temperature dependence of dielectric strength for material E, F, and G.
Fig. 5. Temperature dependence of dielectric permittivity of material E, F, and G.
Fig. 6. Dielectric strength of material E, F, and G with respect to aging time.
Fig. 7. Permittivity of materials E, F, and G with respect to aging time.
