Design of High-Temperature SiC Three-Phase AC-DC Converter for >100°C Ambient Temperature
High temperature (HT) converters have become more and more important in industrial applications where the converters will operate in a harsh environment. These environments require the converter to have not only high-temperature semiconductor devices (SiC, GaN) but also high-temperature gate drive, high-temperature passive components and control electronics. This work describes a design process for a three-phase PWM rectifier. The SiC JFET planar structure is used for the main semiconductor devices. Other high-temperature components, including the passive components, silicon-on-insulator chips and the auxiliary components are studied and designed to reach the high temperature requirement. Finally, a 1.4 kW lab prototype is fabricated and tested for verification. The system works fine from -50°C to 150°C ambient and the junction temperature of the SiC power module reaches 250°C.