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SiC LC-JBS Rectifier

Year: 2004
Present commercial high-voltage SiC Schottky rectifiers have a delicate tradeoff between forward voltage drop and leakage current density at elevated temperatures. By employing an epitaxial re-growth over p implanted buried regions to realize shielded Schottky junction regions, researchers have demonstrated advanced 1 kV SiC Schottky rectifiers with leakage current density as low as that of SiC pin junction rectifiers, with a minimal (about 0.2 V) increase in forward drop. While unit cell design has been optimized, technology transfer of these rectifiers to manufacturing requires process simplification and sensitivity assessment, which will be accomplished by interacting closely with interested industrial partners.

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