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10 kV SiC MOSFET Power Module with Double-Sided Jet-Impingement Cooling
Year: 2023 | Author: Mark Cairnie | Paper: T2.4
Fig.1. Assembled 50A, 10kV SiC MOSFET package with double-sided jet-impingement cooling, measuring 65 x 51 x 22 mm3.
A combination of experimental measurements and analytical models were used to verify the thermal performance of the coolers and compare them to commercially available options. According to the experimental results, the integrated coolers in conjunction with the double-sided cooling can dissipate a heat load of 200 W/cm2 with an inlet temperature of 45° C, while maintaining a maximum junction temperature <160° C. The double-sided cooling provided a 30% decrease in effective θjc, from 0.253 K/W to 0.176 K/W per switch position, when compare to the equivalent single-sided cooled package. Pulsed switching tests were conducted at a bus voltage of 3 kV and a 60A load current, where the low stray inductance of the package enabled slew rates in excess of 150 V/ns. This module serves as a demonstration of the viability of double-sided cooling for improving the thermal performance of MV SiC devices without compromising electrical performance.
