Physics-Based Analytical Model for High-Voltage Bidirectional GaN Tran-sistor Using Lateral GaN Power HEMT
Figure 1 shows the schematic representation of a bidirectional transistor consisting of two discrete switches. This circuit was realized with a commercially available 200V, 3A GaN HEMTs (EPC-2012) laid out on a PCB. The constituent transistors were fully characterized, then modeled using Statz' GaAs JFET model as a reference. Figure 2 demonstrates the accuracy of the model compared to experimental data. The model shows a very good correlation to the experimental results all the way up to 125°C.
Next, the bidirectional switch was simulated using the model developed for the con-stituent transistors, its output I-V compared to experimental results is detailed in Figure 3.
Finally, the bidirectional transistor was used to switch 100V at 3A with a switching speed of 21ns. In addition, it exhibited an on-state resistance of only 114m%uF057 and a blocking voltage of 200V in both polarities with the gate voltage equal to 0V!