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Design Considerations for GaN HEMT Multichip Half-bridge Module for High-Frequency Power Converters

Year: 2014
Fig. 1. (a) Half-bridge design using SMD devices.
CPES has created a design of a multichip Gallium-Nitride (GaN) power module for high-frequency power conversion. The module is designed with the HRL 600 V Gallium-Nitride (GaN) enhancement-mode HEMT device. To exploit the capability of fast switching with low loss from high-voltage GaN devices, different layout structures have been analyzed to reduce power loop parasitic inductance and improve switching performance. The approach investigated is based on a multi-chip module where small-current-rated dies are placed in parallel to achieve higher current handling capability. Finite-element analysis (FEA) and switching circuit simulation show that the multi-layer powerloop design can effectively reduce the gate loop inductance and voltage over-shoot on the devices. This multi-layer design also improves current sharing of the multi-chip module during switching operation.

Fig. 1. (b) Layout 1 - Cascade structure.
Fig. 1. (c) Layout 2 - Cascade multi-layer structure.

Fig. 1. (d) Layout 3 - Paralleled multi-layer structure.

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