LIBRARY
10 kV, 120 A SiC MOSFET Modules for a Power Electronics Building Block (PEBB)

Fig. 1. PEBB with bulk capacitors, SiC H-bridge, and inductor
The PEBB structure and layout are shown in Fig.1. In addition to the SiC H-bridge, each PEBB has two arm inductors, two series DC link capacitors, and a 6.5 kV IGBT for short circuit protection. The IGBT is always conducting unless the desaturation protection on the IGBT gate driver is triggered. This is meant to protect the H-bridge from the energy stored in the DC link capacitors. All the interconnections are implemented with a laminated bus bar, which can effec-tively reduce the loop parasitic inductance. The optimized layout design reduces loop induct-ance and can therefore improve switching performance.

Fig. 2. Turn on (left) and turn off (right) DPT waveforms at 4.7 kV and 100 A with the drain current (top), drain-source voltage (middle), and gate-source voltage (bottom) shown
INDUSTRY PARTNERS