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2019 CPES Conference - Dialogue Session

Dialogue Session D4: Characterization, Packaging, and Applications of SiC Switches

D4.1: A Wire-bond-less 10 kV SiC MOSFET Power Module with Reduced Common-mode Noise and Electric Field
Christina Dimarino, Bassem Mouawad, Ke Li, Dushan Boroyevich, Yue Xu, Rolando Burgos
D4.2: Monolithic Realization of Normally-Off Switch Using D-Mode GaN MOSFET
Michael Emanuel, Khai Ngo, Dong Sam Ha
D4.3: Dual Active Bridge (DAB) MV Grid Connected EV Charging Application
Lee Gill, Bo Li, Khai Ngo, Dong Dong
D4.4: The Optimal Design of GaN HMETs Active-Clamp Flyback Converter with WideInput Range
Jiewen Hu, Bo Wen, Rolando Burgos, Yonghan Kang, Keyao Sun, Dushan Boroyevich
D4.5: Gate Driver and Device Sensor Design and Integration for series-connected 10 kV SiC MOSFETs
Dong Dong, Rolando Burgos
D4.6: Phase Current Sensor and Short-Circuit Detection based on Rogowski Coils Integrated on Gate Driver for 1.2 kV SiC MOSFET Half-Bridge Module
Slavko Mocevic, Jun Wang, Rolando Burgos, Dushan Boroyevich
D4.7: SiC MOSFET Characterization and Reliability at 300 0C
David Nam, Lanbing Liu, Rolando Burgos, Guo Quan Lu
D4.8: Design of a Compact, Low-inductance 1200 V, 6.5 m SiC Half-Bridge Power Module with Flexible PCB Gate Loop Connection
Grace Watt, Amy Romero, Rolando Burgos, Marko Jaksic
D4.9: High-Power Density GaN-based Interleaved Buck DC-DC Converter for 1 kW Brick Modules with 98.5 % Efficiency
Christopher Salvo, Bingyao Sun, Rolando Burgos, Qiang Li
D4.10: GaN-based High-Frequency Critical Conduction Mode Transformerless PV Inverter
Zhengrong Huang, Qiang Li, Fred Lee
D4.11: Design of Shortcircuit and Overload Gate-Driver Protection Schemes for 1.2 kV, 400 A SiC MOSFET Modules
Keyao Sun, Jun Wang, Rolando Burgos, Dushan Boroyevich
D4.12: Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
Jun Wang, Rolando Burgos, Dushan Boroyevich, Zeng Liu
D4.13: Design and Testing of 6 kV H-bridge Power Electronics Building Block Based on 10 kV SiC MOSFET Module
Jun Wang, Slavko Mocevic, Jiewen Hu, Yue Xu, Christina Dimarino, Igor Cvetkovic, Rolando Burgos, Dushan Boroyevich
D4.14: A High-Speed Gate Driver with PCB-Embedded Rogowski Switch-Current Sensor for a 10 kV, 240 A, SiC MOSFET Module
Jun Wang, Slavko Mocevic, Yue Xu, Christina DiMarino, Rolando Burgos, Dushan Boroyevich
D4.15: Design Space of Vertical GaN Superjunction Power Transistors for 1.2-10 kV Applications
D4.16: Current-transformer-based, High-frequency Auxiliary Power Supply for Medium Voltage SiC Devices
Jiewen Hu, Dong Dong, Rolando Burgos
D4.17: Evaluation on the Dynamic Rds_on in 650V GaN E-HEMT under Forward and Reverse Conduction Modes
Tianyu Zhao, Rolando Burgos, Sandeep Bala, Jing Xu
D4.18: Effect of Surface Roughening of Temperature-cycled Ceramic-metal-bonded Substrates on Thermomechanical Reliability of Sintered-silver Joints
Shan Gao, Seiya Yuki, Hideyo Osanai, Weizhen Sun, Khai Ngo, Guo Quan Lu
D4.19: High-Frequency Transformer Design for Modular Power Conversion From Medium-Voltage AC to 400 VDC
Shishuo Zhao, Qiang Li, Fred Lee, Bin Li
D4.20: 1.2 kV High Temperature Power Modules of Ga2O3 devices
D4.21: Reliability of 1.2 kV SiC MOSFETs: Switching Acceleration Test & Physics-based Mixed-mode Simulation
Joseph Kozak

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