CONFERENCE
2013 Tutorials
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Paul ChowAbstract
The design methodologies and predicted performance of high voltage SiC and GaN power switching devices will be presented and compared with those of Si counterparts. Recent progress in high voltage Si, SiC and GaN power devices over the last few years will be reviewed. In particular, bi-directional Si IGBTs, which offer superior forward drop vs. switching energy tradeoffs, as well as reduced device counts, will be discussed. SiC JFETs and MOSFETs have been recently commercialized and their performances have been continually improved and preliminary reported reliability will be discussed. GaN HEMT-based power transistors have also been commercially available recently and critical challenges in both performance and reliability that need to be addressed will be pointed out.
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Mingkai MuAbstract
The core loss measurement techniques have been studied and improved for decades. This tutorial starts from reviewing existing core loss measurement methods by previous efforts. Their advantages and disadvantages are discussed. To overcome those disadvantages like sensitivity to phase error, hard to separate winding loss and limited waveforms, etc., a new series of core loss measurement methods are introduced. The principle of the new methods is using a low loss capacitive or inductive component to reduce the measurement sensitivity to phase error, which is a severe problem when measuring high quality factor core samples. In addition, the new methods automatically exclude the winding loss from the measurement and are able to test the core loss under sinusoidal and non-sinusoidal waveforms. Many new observed phenomena, considerations and tips of the new methods are analyzed and discussed, which are crucial to the accuracy of the measurement. Various commercial and emerging magnetic materials are characterized and reported in this tutorial as well.
